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SD211DE/SST211 Series
N-Channel Lateral DMOS FETs
SD211DE SD213DE SD215DE Product Summary
Part Number
SD211DE SD213DE SD215DE SST211 SST213 SST215
SST211 SST213 SST215
tON Max (ns)
2 2 2 2 2 2
V(BR)DS Min (V)
30 10 20 30 10 20
VGS(th) Max (V)
1.5 1.5 1.5 1.5 1.5 1.5
rDS(on) Max (W)
45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V
Crss Max (pF)
0.5 0.5 0.5 0.5 0.5 0.5
Features
D D D D D Ultra-High Speed Switching--tON: 1 ns Ultra-Low Reverse Capacitance: 0.2 pF Low Guaranteed rDS @ 5 V Low Turn-On Threshold Voltage N-Channel Enhancement Mode
Benefits
D D D D D High Speed System Performance Low Insertion Loss at High Frequencies Low Transfer Signal Loss Simple Driver Requirement Single Supply Operation
Applications
D D D D D Fast Analog Switch Fast Sample-and-Holds Pixel-Rate Switching DAC Deglitchers High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for "5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An
TO-206AF (TO-72)
integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability.
For similar products see: quad array--SD5000/5400 series and non-Zener protection--SD210DE/214DE.
TO 253 (SOT 143) Body Substrate 1 4 G
S 1 4
Body Substrate (Case)
2 D
3 G
S
2
3
D
Top View SD211DE, SD213DE, SD215DE
Top View SST211 (D1)*, SST213 (D3)*, SST215 (D5)* *Marking Code for TO 253
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295. Applications information may also be obtained via FaxBack, request document #70607.
Siliconix S-51850--Rev. F, 14-Apr-97
1
SD211DE/SST211 Series
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Gate Drain, Gate Source Voltage (SD211DE/SST211) -30/25 V (SD213DE/SST213) -15/25 V (SD215DE/SST215) -25/30 V Gate Substrate Voltagea (SD211DE/SST211) . . . . . . . . -0.3/25 V (SD213DE/SST213) . . . . . . . -0.3/25 V (SD215DE/SST215) . . . . . . . -0.3/30 V Drain Source Voltage (SD211DE/SST211) . . . . . . . . . . . . (SD213DE/SST213) . . . . . . . . . . . (SD215DE/SST215) . . . . . . . . . . . (SD211DE/SST211) . . . . . . . . . . . . (SD213DE/SST213) . . . . . . . . . . . (SD215DE/SST215) . . . . . . . . . . . 30 V 10 V 20 V 10 V 10 V 20 V Source Substrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 15 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . -55 to 125_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Source Drain Voltage
Drain Substrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V
Notes: a. Derate 3 mW/_C above 25_C
Specificationsa
Limits
211 Series 213 Series 215 Series
Parameter Static
Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Drain-Substrate Breakdown Voltage Source-Substrate Breakdown Voltage Drain-Source Leakage Source-Drain Leakage Gate Leakage Threshold Voltage
Symbolb
Test Conditionsb
VGS = VBS = 0 V, ID = 10 mA VGS = VBS = -5 V, ID = 10 nA VGD = VBD = -5 V, IS = 10 nA VGB = 0 V, ID = 10 nA , Source Open VGB = 0 V, IS = 10 mA , Drain Open VGS = VBS = -5 V 5 VGD = VBD = -5 V 5 VDS = 10 V VDS = 20 V VSD = 10 V VSD = 20 V
Typc
Min
Max
Min
Max
Min
Max
Unit
V(BR)DS V(BR)SD V(BR)DBO V(BR)SBO IDS( ff) DS(off) ISD( ff) SD(off) IGBS VGS(th)
35 30 22 35 35 0.4 0.9 0.5 1 0.01 0.8 58
30 10 10 15 15 10 10 100 0.5 1.5 70 0.1 10 10 15 15 10 10 10 10 100 1.5 70 0.1 100 1.5 70 V nA 20 20 V 25 25
VDB = VSB = 0 V, VGB = 30V VDS = VGS , ID = 1 mA VSB = 0 V VGS = 5 V (SD Series) VGS = 5 V (SST Series)
60
75
75
75
Drain-Source On-Resistance On Resistance
rDS(on)
VSB = 0 V ID = 1 mA
VGS = 10 V (SD Series) VGS = 10 V (SST Series) VGS = 15 V VGS = 20 V VGS = 25 V
38
45
45
45
W
40 30 26 24
50
50
50
2
Siliconix S-51850--Rev. F, 14-Apr-97
SD211DE/SST211 Series
Specificationsa
Limits
211 Series 213 Series 215 Series
Parameter Dynamic
Forward F d Transconductance Gate Node Capacitance Drain Node Capacitance Source Node Capacitance Reverse Transfer Capacitance
Symbolb
Test
Conditionsb
Typc
Min
Max
Min
Max
Min
Max
Unit
gf fs gos C(GS+GD+GB) C(GD+DB) C(GS SB) (GS+SB) Crss
VDS = 10 V VSB = 0 V ID = 20 mA, f = 1 kHz mA
SD Series SST Series All
11 10.5 0.9 2.5
10 9
10 9
10 9 mS
3.5 1.5 5.5
3.5 1.5 5.5
3.5 1.5 5.5 F pF
SD Series VDS = 10 V f = 1 MHz VGS = VBS = -15 V 5 SST Series SD Series
1.1 3.7 4.2 0.2
0.5
0.5
0.5
Switching
Turn-On Turn On Time Turn-Off Time td(on) tr td(off) tf SD Series Only V, V, VSB = 0 V VIN 0 to 5 V RG = 25 W VDD = 5 V, RL = 680 W 0.5 0.6 2 6 1 1 1 1 1 1 ns
Notes: a. TA = 25_C unless otherwise noted. b. B is the body (substrate), and (BR) is breakdown. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
DMCBA
Siliconix S-51850--Rev. F, 14-Apr-97
3
SD211DE/SST211 Series
Typical Characteristics
On-Resistance vs. Gate-Source Voltage
rDS(on) - Drain-Source On-Resistance (W ) 300 VGS = 4 V Leakage 1 nA IS(off) 100 pA ISBO 5V 10 pA 60 10 V IGSS (Diode) 0 0 4 8 12 16 20 VSB - Body-Source Voltage (V) 1 pA 0 4 8 12 16 20 Applied Voltage (V) ID(off) 10 nA
Leakage Current vs. Applied Voltage
ID (off) @ VGS = VBG = -5 V IS(off) @ VGD = VBD = -5V ISBO @ VGB = 0 V, Drain Open
240
180
120
On-Resistance vs. Temperature
100 rDS(on) - Drain-Source On-Resistance ( W ) g fs - Forward Transconductance (mS) ID = 5 mA, VBS = 0 V 80 VGS = 5 V 10 V 15 V 40 20 V 20
20
Common-Source Forward Transconductance vs. Drain Current
VDS = 15 V VBS = 0 V
16 TA = 55_C 12 25_C
60
8 125_C 4
0 -60 -20 20 60 100 140 TA - Temperature (_C) 5
0 1 10 ID - Drain Current (mA) 1.0 100
Threshold Voltage vs. Temperature
VGS = VDS = VTH ID = 1 mA g os - Output Conductance (mS)
Output Conductance vs. Drain Current
VBS = 0 V f = 1 kHz
V GS(th) - Gate-Source Threshold Voltage (V)
4
0.8 VDS = 5 V 0.6 10 V 0.4
3
VBS = -10 V -5 V -1 V -0.5 V
2
1 0V 0 -60
0.2
15 V
0 -20 20 60 100 140 0 4 8 12 16 20 TA - Temperature (_C) ID - Drain Current (mA)
4
Siliconix S-51850--Rev. F, 14-Apr-97
SD211DE/SST211 Series
Typical Characteristics (Cont'd)
Threshold Voltage vs. Substrate-Source Voltage
V GS(th) - Gate-Source Threshold Voltage (V) 5 VGS = VDS = VTH ID = 1 mA TA = 25_C Leakage (nA) 100
Leakage Current vs. Temperature
ID(off) @ VGS = VBS = -5 V, VDS = 10 V IS(off) @ VGD = VBD = -5 V, VSD = 10 V IGSS @ VGS = 10 V ISBO @ VSB = 10 V Drain Open
4
IS(off) ID(off)
3
H
10
2 L 1
IGSS (Diode)
ISBO
0 0 -4 -8 -12 -16 -20 VBS - Body-Source Voltage (V) 10
1 25 50 75 100 125 TA - Temperature (_C) 100 mA 10 mA 1 mA I B - Body Leakage 100 nA 10 nA 1 nA 100 pA 10 pA 1 pA 20 0 4 8 12 VDB (V) 100 16 20 1 mA ID = 13 mA
Capacitance vs. Gate-Source Voltage
VDS = 10 V, f = 1 MHz VGS = VBS
Body Leakage Current vs. Drain-Body Voltage
8 Capacitance (pF)
6 C(GS+SB) C(GS+GD+GB) 2 C(GD+DB) C(DG) 0 4 8 12 16
4
0
VGS - Gate-Source Voltage (V)
Input Admittance
100 VDS = 10 V ID = 10 mA TA = 25_C 10 (mS) bis (mS)
Forward Admittance
VDS = 10 V ID = 10 mA TA = 25_C gfs
10
1 gis 0.1 100 200 500 1000 f - Frequency (MHz)
1 -bfs
0.1 100 200 500 1000 f - Frequency (MHz)
Siliconix S-51850--Rev. F, 14-Apr-97
5
SD211DE/SST211 Series
Typical Characteristics
Reverse Admittance
1 VDS = 10 V ID = 10 mA TA = 25_C brs 0.1 (mS) +grg 0.01 -grg (mS) 10 100 VDS = 10 V ID = 10 mA TA = 25_C
Output Admittance
bog 1 gog
0.001 100 200 500 1000 f - Frequency (MHz)
0.1 100 200 500 1000 f - Frequency (MHz)
700 600
Switching Characteristics
50
Output Characteristics
VBS = 0 V TA = 25_C
40 500 R L ( W) 400 300 200 100 0 0 1 2 3 4 5 6 7 tf - Fall Time (ns) 0 0 4 8 12 16 20 VDS - Drain-Source Voltage (V) I D - Drain Current (mA) VGS = 5 V
30
20
4V
10
3V 2V
Switching Time Test Circuit
To Scope +VDD +5 V 510 W RL VOUT To Scope Input pulse: td, tr < 1 ns Pulse width: 100 ns Rep rate: 1 MHz 51 W VIN 0V td(on) +VDD VOUT 0V tr 50% 10% tf td(off) 90% 50%
VIN
Sampling Scope
tr < 360 ps RIN = 1 MW CIN = 2 pF BW = 500 MHz
6
Siliconix S-51850--Rev. F, 14-Apr-97

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